PZTA96ST1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Voltage Transistor

PZTA96ST1
Preferred Device
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation Up to
T_A = 25°C (Note 1)
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to
Ambient (Note 1)
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
Value
–450
–450
–5.0
–500
1.5
Unit
Vdc
Vdc
Vdc
mAdc
Watts
T_stg
–65 to +150 °C
T_J
150
°C
Symbol
R_qJA
Max
83.3
Unit
°C
ELECTRICAL CHARACTERISTICS (Note 2)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V_(BR)CEO –450 – Vdc
(I_C = –1.0 mAdc, I_B = 0)
Collector–Emitter Breakdown Voltage V_(BR)CBO –450 – Vdc
(I_C = –100 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage
(I_E = –10 mAdc, I_C = 0)
V_(BR)EBO –5.0 –
Vdc
Collector–Base Cutoff Current
(V_CB = –400 Vdc, I_E = 0)
I_CBO
– –0.1 mAdc
Emitter–Base Cutoff Current
(V_BE = –4.0 Vdc, I_C = 0)
I_EBO
– –0.1 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = –10 mAdc, V_CE = –10 Vdc)
h_FE
50 150 –
Saturation Voltages
(I_C = –20 mAdc, I_B = –2.0 mAdc)
(I_C = –20 mAdc, I_B = –2.0 mAdc)
V_CE(sat)
V_BE(sat)
Vdc
– –0.6
– –1.0
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in².
2. T_A = 25°C unless otherwise noted.
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%.
http://onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
4
1
2
3
SOT–223, TO–261AA
CASE 318E
STYLE 1
AWW
ZTA96
A
= Location
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
PZTA96ST1
SOT–223 1000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
June, 2002 – Rev. 1
Publication Order Number:
PZTA96ST1/D