NTGS4111PT2G Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

NTGS4111P
Power MOSFET
−30 V, −4.7 A, Single P−Channel, TSOP−6
Features
• Leading −30 V Trench Process for Low R_DS(on)
• Low Profile Package Suitable for Portable Applications
• Surface Mount TSOP−6 Package Saves Board Space
• Improved Efficiency for Battery Applications
• Pb−Free Package is Available
Applications
• Battery Management and Switching
• Load Switching
• Battery Protection
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
−3.7
A
−2.7
t ≤ 5 s T_A = 25°C
−4.7
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
1.25
W
t ≤5 s
2.0
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C P_D
−2.6
A
−1.9
0.63 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_DM
−15
A
T_J,
−55 to °C
T_STG
150
I_S
−1.7
A
T_L
260
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R_qJA
100 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R_qJA
62.5
Junction−to−Ambient – Steady State (Note 2)
R_qJA
200
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
http://onsemi.com
V_(BR)DSS
−30 V
R_DS(on) TYP
38 mW @ −10 V
68 mW @ −4.5 V
P−Channel
1256
I_D MAX
−4.7 A
3
4
1
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
654
TG M G
G
123
Drain Drain Gate
TG
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTGS4111PT1 TSOP−6 3000 / Tape & Reel
NTGS4111PT1G TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
July, 2009 − Rev. 3
Publication Order Number:
NTGS4111P/D