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NSB9435T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Current Bias Resistor Transistor | |||
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NSB9435T1
Preferred Device
High Current Bias
Resistor Transistor
PNP Silicon
⢠Collector âEmitter Sustaining Voltage â
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
⢠High DC Current Gain â
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
⢠Low Collector âEmitter Saturation Voltage â
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
⢠SOTâ223 Surface Mount Packaging
⢠ESD Rating â Human Body Model: Class 1B
ESD Rating â Machine Model: Class B
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
VCEO
VCB
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
VEB
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current â Continuous
IB
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
IC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Peak
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
PD
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
Total PD @ TA = 25_C mounted on 1â³
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ sq. (645 sq. mm) Collector pad on
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ FRâ4 bd material
Total PD @ TA = 25_C mounted on
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 0.012â³ sq. (7.6 sq. mm) Collector
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ pad on FRâ4 bd material
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
TJ, Tstg
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
Value
30
45
±6.0
1.0
3.0
5.0
3.0
24
1.56
0.72
â55 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
Watts
Watts
_C
Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà Thermal Resistance â Junction to Case RθJC
42
â Junction to Ambient on 1â³ sq.
RθJA
80
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (645 sq. mm) Collector pad on
FRâ4 board material
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Junction to Ambient on 0.012â³ sq.
RθJA
174
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (7.6 sq. mm) Collector pad on FRâ4
board material
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum Lead Temperature for
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Soldering Purposes, 1/8â³ from
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ case for 5 seconds
TL
260
Unit
_C/W
_C
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
COLLECTOR 2,4
BASE
1
EMITTER 3
4
1
2
3
SOTâ223
CASE 318E
STYLE 1
MARKING DIAGRAM
9435R
9435R = Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSB9435T1
SOTâ223 1000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 â Rev. 2
Publication Order Number:
NSB9435T1/D
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