MT9V024 Datasheet, PDF (1/62 Pages) ON Semiconductor – Wide-VGA CMOS Digital Image Sensor

MT9V024: 1/3-Inch Wide-VGA Digital Image Sensor
Features
1/3-Inch Wide-VGA CMOS Digital Image Sensor
MT9V024 Datasheet, Rev. G
For the latest datasheet revision, please visit www.onsemi.com
Features
• Array format: Wide-VGA, active 752H x 480V
(360,960 pixels)
• Global shutter photodiode pixels; simultaneous
integration and readout
• RGB Bayer, Monochrome, or RCCC: NIR enhanced
performance for use with non-visible NIR
illumination
• Readout modes: progressive or interlaced
• Shutter efficiency: >99%
• Simple two-wire serial interface
• Real-time exposure context switching - dual register
set
• Register lock capability
• Window size: User programmable to any smaller
format (QVGA, CIF, QCIF). Data rate can be
maintained independent of window size
• Binning: 2 x 2 and 4 x 4 of the full resolution
• ADC: On-chip, 10-bit column-parallel (option to
operate in 12-bit to 10-bit companding mode)
• Automatic controls: Auto exposure control (AEC)
and auto gain control (AGC); variable regional and
variable weight AEC/AGC
• Support for four unique serial control register IDs to
control multiple imagers on the same bus
• Data output formats:
– Single sensor mode:
10-bit parallel/stand-alone
8-bit or 10-bit serial LVDS
– Stereo sensor mode:
Interspersed 8-bit serial LVDS
• High dynamic range (HDR) mode
Applications
• Automotive
• Unattended surveillance
• Stereo vision
• Smart vision
• Automation
• Video as input
• Machine vision
Table 1:
Key Performance Parameters
Parameter
Optical format
Active imager size
Active pixels
Pixel size
Color filter array
Shutter type
Maximum data rate
master clock
Full resolution
Frame rate
ADC resolution
Responsivity
Dynamic range
Supply voltage
Power consumption
Operating temperature
Packaging
Value
1/3-inch
4.51 mm (H) x 2.88 mm (V)
5.35 mm diagonal
752H x 480V
6.0 m x 6.0 m
Monochrome, color RGB Bayer or
RCCC pattern
Global shutter
27 Mp/s
27 MHz
752 x 480
60 fps (at full resolution)
10-bit column-parallel
4.8 V/lux-sec (550 nm)
>55 dB linear;
>100 dB in HDR mode
3.3 V +0.3 Vall supplies)
<160 mW at maximum data rate
(LVDS disabled); 120 W standby
power at 3.
-40°C to +105°C ambient
52-ball iBGA, automotive-qualified;
wafer or die
MT9V024_DSRev. G Pub. 4/15 EN
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