MMDL301 Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Hot-Carrier Diodes

MMDL301T1
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ)
• Device Marking: 4T
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Rating
Value
VR
Reverse Voltage
30
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
PD
Total Device Dissipation FR–5 Board,*
200
TA = 25°C
Derate above 25°C
1.57
R_qJA
TJ, Tstg
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
635
–55 to
+150
*FR–5 Minimum Pad
Unit
Volts
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
1
2
PLASTIC
SOD–323
CASE 477
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMDL301T1 SOD–323 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10 µA)
V(BR)R
30
—
—
Volts
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
CT
—
0.9
1.5
pF
IR
—
13
200
nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
VF
—
0.38
0.45
Vdc
VF
—
0.52
0.6
Vdc
© Semiconductor Components Industries, LLC, 2001
1
January, 2000 – Rev. 0
Publication Order Number:
MMDL301T1/D