MMBF5484LT1 Datasheet, PDF (1/10 Pages) Motorola, Inc – JFET Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF5484LT1/D
JFET Transistor
N–Channel
2 SOURCE
MMBF5484LT1
3
GATE
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
Storage Channel Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF5484LT1 = 6B
Symbol
VDG
VGS(r)
IG(f)
PD
Tstg
Symbol
PD
R_qJA
TJ, Tstg
1 DRAIN
Value
25
25
10
200
2.8
– 65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = – 20 Vdc, VDS = 0)
(VGS = – 20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
  1. FR– 5 = 1.0 0.75 0.062 in.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
|Yfs|
|yos|
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min
– 25
—
—
– 0.3
Max
—
– 1.0
– 0.2
– 3.0
Unit
Vdc
nAdc
µAdc
Vdc
1.0
5.0
mAdc
3000
—
6000
50
µmhos
µmhos
1