MJF122 Datasheet, PDF (1/7 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W

MJF122, MJF127
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular TIP122 and TIP127
• 100 V_CEO(sus)
• 5.0 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain − 2000 (Min) @ I_C = 3 Adc
• UL Recognized, File #E69369, to 3500 V_RMS Isolation
• Pb−Free Packages are Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (Note 1) Test No. 1
Per Figure 14 (for 1 sec, R.H. < 30%,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Test No. 2 Per Figure 15 TA = 25_C)
Test No. 3 Per Figure 16
V_CEO
V_CB
V_EB
V_ISOL
100
100
5
4500
3500
1500
Vdc
Vdc
Vdc
V_RMS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
I_C
5
Adc
8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation (Note 2)}
@ T_C = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
I_B
0.12
Adc
P_D
30
W
0.24
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Derate above 25_C}
P_D
2
W
0.016 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Operating and Storage Junction Tempera- T}J^{, T}stg ^{−65 to}
I_C
ture Range
+ 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
(Note 2)
R_qJA
R_qJC
62.5
_C/W
4.1
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Lead Temperature for Soldering Purpose}
T_L
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings are those values beyond which device damage can occur.}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings applied to the device are individual stress limit values (not}
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
mounting surface (in a location beneath the die), the device mounted on a
heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
http://onsemi.com
COMPLEMENTARY SILICON
POWER DARLINGTONS
5.0 A, 100 V, 30 W
MARKING
DIAGRAM
TO−220
CASE 221D−02
STYLE 2
MJF12xG
AYWW
x
= 2 or 7
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MJF122
Package
TO−220
Shipping^†
50 Units / Rail
MJF122G
TO−220
(Pb−Free)
50 Units / Rail
MJF127
TO−220
50 Units / Rail
MJF127G
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF122/D