LE25W81QE Datasheet, PDF (1/21 Pages) ON Semiconductor – Serial Flash Memory

LE25W81QE
Advance Information
CMOS LSI
8M-bit (1024K x 8)
Serial Flash Memory
www.onsemi.com
Overview
The LE25W81QE is a serial interface-compatible flash memory device with
a 1M  8-bit configuration. It uses a single 2.6V power supply for both
reading and writing (program and erase functions) and does not require a
special power supply. As such, it can support on-board programming. It has
three erase functions, each of which corresponds to the size of the memory
area in which the data is to be erased at one time: the small sector (4K bytes)
erase function, the sector (64K bytes) erase function, and the chip erase
function (for erasing all the data together). The memory space can be
efficiently utilized by selecting one of these functions depending on the
application. A page program method is supported for data writing. The page
program method of LE25W81QE can program any amount of data from 1 to ^{VDFN8 5x6, 1.27P / VSON8T (6x5)}
256 bytes. This IC incorporates ON Semi’s unique high-speed programming
function which enables fast 0.3ms (typ.) page program time.
The program time of 1.5s (typ.) when programming 8-Mbit full-memory space makes for fast data writing when the
chip erase function is used. While making the most of the features inherent to a serial flash memory device, the
LE25W81QE is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in
terms of their read speed, but the LE25W81QE has maximally eliminated this speed-related disadvantage by supporting
clocks with frequencies up to 50MHz under SPI bus specifications. All these features make this device ideally suited to
storing program codes in applications such as portable information devices and small disk systems, which are required
to have increasingly more compact dimensions.
Features
 Read/write operations enabled by single 2.6V power supply : 2.45 to 3.6V supply voltage range
 Operating frequency : 30MHz
 Temperature range
: –20 to +70C (Read operation)
0 to +70C (Write operation)
 Serial interface
: SPI mode 0, mode 3 supported
 Sector size
: 4K bytes/small sector, 64K bytes/sector
 Small sector erase, sector erase, chip erase functions
 Page program function (256 bytes / page)
 Block protect function
 Highly reliable read/write
Number of rewrite times: 100,000 times
Small sector erase time : 80ms (typ.), 300ms (max.)
Sector erase time
: 100ms (typ.), 400ms (max.)
Chip erase time
: 250ms (typ.), 3.0s (max.)
Page program time : 0.3ms/256 bytes (typ.), 1ms/256 bytes (max.)
 Status functions
: Ready/busy information, protect information
 Data retention period : 20 years
 Package
: VDFN8 56
* This product is licensed from Silicon Storage Technology, Inc. (USA).
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 21 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November 2014 - Rev. P0
Publication Order Number :
LE25W81QE/D