KAI-1010 Datasheet, PDF (1/27 Pages) List of Unclassifed Manufacturers – Image Sensor

KAI-1010
1008 (H) x 1018 (V) Interline
CCD Image Sensor
Description
The KAI−1010 Image Sensor is a high-resolution monochrome
charge coupled device (CCD) device whose non-interlaced
architecture makes it ideally suited for video, electronic still and
motion/still camera applications. The device is built using an
advanced true two-phase, double-polysilicon, NMOS CCD
technology. The p+npn− photodetector elements eliminate image lag
and reduce image smear while providing antiblooming protection and
electronic-exposure control. The total chip size is 10.15 (H) mm ×
10.00 (V) mm
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Interline CCD, Non-Interlaced
Total Number of Pixels
1024 (H) × 1024 (V)
Number of Effective Pixels
1008 (H) × 1018 (V)
Number of Active Pixels
1008 (H) × 1018 (V)
Number of Outputs
1 or 2
Pixel Size
9 mm (H) × 9 mm (V)
Active Image Size
9.1 mm (H) × 9.2 mm (V)
12.9 mm (Diagonal)
1″ Optical Format
Optical Fill-Factor
Saturation Signal
Output Sensitivity
Dark Noise
Dark Current
60%
> 50,000 e^−
12 mV/e^−
50 e^− rms
< 0.5 nA/cm²
Quantum Efficiency
(Wavelength = 500 nm)
37%
Blooming Suppression
> 100 X
Maximum Data Rate
20 MHz/Channel (2 Channels)
Image Lag
Negligible
Package
CERDIP
Cover Glass
AR Coated (Both Sides)
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
www.onsemi.com
Figure 1. KAI−1010 Interline
CCD Image Sensor
Features
• Front Illuminated Interline Architecture
• Progressive Scan (Non-Interlaced)
• Electronic Shutter
• On-Chip Dark Reference
• Low Dark Current
• High Sensitivity Output Structure
• Anti-Blooming Protection
• Negligible Lag
• Low Smear (0.1% with Microlens)
Application
• Machine Vision
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 2
Publication Order Number:
KAI−1010/D