KAF-3200 Datasheet, PDF (1/15 Pages) ON Semiconductor – Full Frame CCD Image Sensor

KAF-3200
2184 (H) x 1472 (V) Full
Frame CCD Image Sensor
Description
The KAF−3200 Image Sensor is a high performance CCD
(charge−coupled device) with 2184 (H) x 1472 (V) photoactive pixels
designed for a wide range of image sensing applications.
The sensor incorporates true two−phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity. The
sensor also utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Total Number of Pixels
Number of Active Pixels
Pixel Size
Active Imager Size
Typical Value
Full Frame CCD
2184 (H) x 1510 (V)
2184 (H) x 1472 (V)
6.8 mm (H) x 6.8 mm (V)
14.85 mm (H) x 10.26 mm (V)
18 mm (diag), 4/3” optical format
Optical Fill−Factor
Saturation Signal
Output Sensitivity
Readout Noise (1 MHz)
Dark Current
(25°C, Accumulation Mode)
Dark Current Doubling Rate
Dynamic Range
(Sat Sig / Dark Noise)
100%
55,000 electrons
12 mV/e^−
7 electrons rms
< 7 pA/cm²
6°C
78 dB
Quantum Efficiency with microlenses 55%, 70%, 80%
(Red, Green, Blue)
Maximum Data Rate
Package
Cover Glass
15 MHz
CERDIP Package (sidebrazed)
Clear or AR coated, 2 sides
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−3200 CCD Image Sensor
Features
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• 100% Fill Factor
• Low Dark Current
• Microlenses
• High Output Sensitivity
Applications
• Medical Imaging
• Scientific Imaging
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 3
Publication Order Number:
KAF−3200/D