KAF-16801 Datasheet, PDF (1/16 Pages) ON Semiconductor – Full Frame CCD Image Sensor

KAF-16801
4096 (H) x 4096 (V) Full
Frame CCD Image Sensor
Description
The KAF−16801 is a high performance area CCD (charge-coupled
device) image sensor with 4096 (H) × 4096 (V) photo active pixels
designed for a wide range of image sensing applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity.
The sensor also utilizes the TRUESENSE Transparent Gate Electrode
to improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD
Pixel Count
4096 (H) × 4096 (V)
Pixel Size
9.0 mm (H) × 9.0 mm (V)
Active Image Size
36.88 mm (H) × 36.88 mm (V)
52.1 mm (Diagonal)
645 1.3x Optical Format
Chip Size
38.60 mm (H) × 37.76 mm (V)
Optical Fill Factor
100%
Saturation Signal
Output Sensitivity
Dark Current (Accumulation Model)
100,000 electrons
13 mV/e^−
< 10 pA/cm²
Dark Current Doubling Rate
6°C
Dynamic Range
(Saturation Signal/Dark Noise)
76 dB
Quantum Efficiency
(450, 550, 650 nm)
40%, 52%, 65%
Maximum Date Rate
10 MHz
Package
CERDIP Package (Sidebrazed)
Cover Glass
Clear
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−16801 Full Frame
CCD Image Sensor
Features
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• Low Dark Current
• High Output Sensitivity
Application
• Scientific Imaging
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 3
Publication Order Number:
KAF−16801/D