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KAF-0261 Datasheet, PDF (1/15 Pages) ON Semiconductor – Full Frame CCD Image Sensor
KAF-0261
512 (H) x 512 (V) Full Frame
CCD Image Sensor
Description
The KAF−0261 Image Sensor is a high performance, charge
coupled device (CCD) designed for a wide range of image sensing
applications.
The sensor incorporates true two−phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity. The
sensor also utilizes the TRUESENSE Transparent Gate Electrode to
improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Selectable on−chip output amplifiers allow operation to be
optimized for different imaging needs: Low Noise (when using the
high−sensitivity output) or Maximum Dynamic Range (when using
the low−sensitivity output).
The low dark current of the KAF−0261 makes this device suitable
for low light imaging applications without sacrificing charge capacity.
http://onsemi.com
Table 1. GENERAL SPECIFICATIONS
Figure 1. KAF−0261 CCD Image Sensor
Parameter
Typical Value
Architecture
Number of Active Pixels
Pixel Size
Active Image Size
Chip Size
Optical Fill Factor
Output Sensitivity
High Sensitivity Output
High Dynamic Range Output
Saturation Signal
High Sensitivity Output
High Dynamic Range
Readout Noise (1 MHz)
Dark Current
(25°C, Accumulation Mode)
Full Frame CCD
512 (H) x 512 (V)
20 mm (H) x 20 mm (V)
10.2 mm (H) x 10.2 mm (V)
11.3 mm (H) x 11.6 mm (V)
100%
10 mV/electron
2.0 mV/electron
200,000 electrons
500,000 electrons
22 electrons rms
< 30 pA/cm3
Features
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode for High
Sensitivity
• 100% Fill Factor
• Low Dark Current
• User−selectable Outputs Allow either Low Noise or
High Dynamic Range Operation
• Single Readout Register
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Scientific Imaging
Dark Current Doubling Rate
6°C
Dynamic Range (Sat Sig/Dark 83 dB
Noise) High Sensitivity Output
High Dynamic Range Output
Range
87 dB
Quantum Efficiency (450, 550, 35%, 55%, 58%
650 nm)
Maximum Data Rate
High Sensitivity Output
High Dynamic Range Output
5 MHz
2 MHz
Transfer Efficiency
> 0.99997
Package
CERDIP Package
Cover Glass
Clear or AR coated, 2 sides
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 2
Publication Order Number:
KAF−0261/D