FW389 Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary Dual Power MOSFET

Ordering number : ENA2066A
FW389
Power MOSFET
100V, 2A, 225mΩ, ^{–100V, –2A,} 300mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
• _{ON-resistance Nch : RDS(on)1=165mW(typ.)}
• _{Input Capacitance Nch : Ciss=490pF(typ.)}

Pch : RDS(on)1=230mW(typ.)
Pch : Ciss=1000pF(typ.)
• _{4V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel P-channel
Unit
Drain-to-Source Voltage
VDSS
100
--100
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
2
--2
A
Drain Current (PW≤100ms)
IDP
Duty cycle≤1%
5
--5
A
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
IDP
Duty cycle≤1%
PD
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, (PW≤10s)
PT
When mounted on ceramic substrate (2000mm²Ã—0.8mm), (PW≤10s)
8
--8
A
1.8
W
2.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
5.3
5.3 mJ
2
--2
A
*1 N-Channel:VDD=10V, L=2mH, IAV=2A(Fig.1)
P-Channel:VDD=--10V, L=2mH, IAV=--2A(Fig.1)
*2 L≤2mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
lectrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Ratings
Unit
min
typ
max
100
V
1
mA
±10
mA
1.5
2.6
V
2.9
S
165
225 mW
180
254 mW
190
275 mW
490
pF
34
pF
13
pF
9.3
ns
5.4
ns
42
ns
26
ns
Continued on next page.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003093/61312TKIM PA No. A2066-1/8