EN2006D Datasheet, PDF (1/7 Pages) ON Semiconductor – Bipolar Transistor

Ordering number : EN2006D
2SA1417/2SC3647
Bipolar Transistor
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
• _{Adoption of FBET, MBIT processes}
• _{High breakdown voltage and large current capacity}
• _{Fast switching speed}
• _{Ultrasmall size making it easy to provide high-density small-sized hybrid ICs}
Specifications ^{( ) : 2SA1417}
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
(--)120
V
(--)100
V
(--)6
V
(--)2
A
(--)3
A
500 mW
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA1417S-TD-E
2SA1417T-TD-E
1.5 _{2SC3647S-TD-E}
2SC3647T-TD-E
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
2
3
0.4
0.4
0.5
1.5
3.0
TD
Marking
RANK
RANK
0.75
2SA1417
2SC3647
Electrical Connection
2
2
1 : Base
2 : Collector
3 : Emitter
1
1
Bottom View
PCP
3
2SA1417
3
2SC3647
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7