EFC6611R Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2291A
EFC6611R
N-Channel Power MOSFET
12V, 27A, 3.2mΩ, Dual EFCP
Features
 2.5V drive
 Protection diode in
 Halogen free compliance
Applications
 Lithium-ion battery charging and discharging switch
 Common-drain type
 2KV ESD HBM
http://onsemi.com
Specifications
Absolute Maximum Ratings at Ta = 25C
EFCP3517-6DGH-020
Parameter
Symbol
Conditions
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW100s, duty cycle1%
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
12
V
8
V
27
A
100
A
2.5
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
Symbol
R_JA
Value
50
Unit
C /W
Electrical Characteristics at Ta  25C
Parameter
Symbol
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
Conditions
IS=1mA, VGS=0V
VSS=10V, VGS=0V
VGS=±8V, VSS=0V
VSS=6V, IS=1mA
VSS=6V, IS=3A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
12
0.5
Value
Unit
typ
max
V
1 A
1 A
1.3
V
19
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40214HK TC-00003102/21214TKIM No.A2291-1/6