BUL642D2 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

BUL642D2
High Speed, High Gain
Bipolar NPN Transistor with
Integrated
Collector−Emitter and
Built−in Efficient
Antisaturation Network
The BUL642D2 is a state−of−the−art High Speed High Gain
Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to
lot minimum spread (150 ns on storage time) make it ideally suitable
for Light Ballast Application. A new development process brings
avalanche energy capability, making the device extremely rugged.
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I_C = 300 mA/5 V
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized Dynamic V_CEsat
• “Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
• Avalanche Energy 20 mJ Typical Capability
• Pb−Free Package is Available*
http://onsemi.com
3 AMPERES
825 VOLTS
75 WATTS
POWER TRANSISTOR
1
2
3
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
BUL642D2G
AYWW
BUL642D2
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 1
ORDERING INFORMATION
Device
BUL642D2
BUL642D2G
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
Publication Order Number:
BUL642D2/D