ATP302 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1654A
ATP302
P-Channel Power MOSFET
–60V, –70A, _{13mΩ, ATPAK}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=10mΩ (typ.)}
• _{4.5V drive}
• _{Input capacitance Ciss=5400pF (typ.)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--36V, L=100μH, IAV=--42A
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--70
A
--280
A
70
W
150
°C
--55 to +150
°C
197 mJ
--42
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
1.5
0.4
4
ATP302-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Marking
ATP302
LOT No.
2
1
3
0.8
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/21710QA TKIM TC-00002247 No. A1654-1/7