AND8048 Datasheet, PDF (1/8 Pages) ON Semiconductor – Dual P-Channel 1.8 V (G-S) MOSFET

AND8048/D
SPICE Device Model
NTHD5905T1
Dual P–Channel 1.8 V (G–S) MOSFET
http://onsemi.com
APPLICATION NOTE
CHARACTERISTICS
• P–Channel Vertical DMOS
• Macro–Model (Sub–circuit)
• Level 3 MOS
• Applicable for both Linear and Switch Mode
• Applicable over a –55 to 125°C Temperature Range
• Models Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
DESCRIPTION
The attached SPICE Model describes typical electrical
characteristics of the p–channel vertical DMOS. The
sub–circuit model was extracted and optimized over a 25°C
to 125°C temperature range under pulse conditions for 0 to
–5 volts gate drives. Saturated output impedance model
accuracy has been maximized for gate biases near
threshold. A novel gate–to–drain feedback capacitor
network is used to model gate charge characteristics while
avoiding convergence problems of switched C_gd model.
Model parameter values are optimized to provide a best fit
to measure electrical data and are not intended as an exact
physical description of a device.
D
4
M
R
M
3
DB
G
1
C_GS
2
S
Figure 1. Model Sub–circuit
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 0
Publication Order Number:
AND8048/D