PSMN9R5-30YLC Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using

NXP Semiconductors
PSMN9R5-30YLC
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology
40
R_DSon
(mΩ)
30
2.8
3.0
003aag190
20
10
0
0
V_GS(V) = 3.5
4.5
10
10
20
30
40
50
I_D (A)
2
a
1.5
1
003aag191
4.5V
V_GS =10V
0.5
0
-60
0
60
120
180
T_j (DC)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
V_GS
(V)
8
6
4
2
0
0
003aag192
24V
15V
V_DS = 6V
4
8 _{QG (nC)} 12
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN9R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© NXP B.V. 2011. All rights reserved.
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