PSMN9R5-30YLC Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using

NXP Semiconductors
PSMN9R5-30YLC
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 15 A;
V_DS = 15 V; see Figure 14;
see Figure 15
Q_G(tot)
total gate charge
V_GS = 4.5 V; I_D = 15 A;
V_DS = 15 V; see Figure 14;
see Figure 15
Min Typ Max Unit
-
1.6 -
nC
-
5-
nC
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN9R5-30YLC LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
PSMN9R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© NXP B.V. 2011. All rights reserved.
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