PSMN8R0-30YLC Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN8R0-30YLC
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
30
RDS on
(m)
25
20
15
10
5
0
0
2.8 3.0
003aag160
VGS (V) =3.5
4.5
10
20
40
60
80
ID (A)
2
a
1.5
1
4.5V
003aag161
VGS=1 0 V
0.5
0
-6 0
0
60
120
180
Tj (C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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10
VGS
(V)
8
6
4
2
0
0
003aag162
24V
15V
VDS = 6V
5
10
15
20
QG (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN8R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© NXP B.V. 2011. All rights reserved.
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