PSMN8R0-30YLC Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN8R0-30YLC
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
t_d(on)
t_r
t_d(off)
t_f
Q_oss
turn-on delay time
rise time
turn-off delay time
fall time
output charge
Source-drain diode
V_DS = 15 V; R_L = 1 Ω; V_GS = 4.5 V;
R_G(ext) = 4.7 Ω
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 15 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V
t_a
reverse recovery rise V_GS = 0 V; I_S = 15 A; dI_S/dt = -100 A/µs;
time
V_DS = 15 V; see Figure 18
t_b
reverse recovery fall
time
Min Typ Max Unit
-
15
-
ns
-
11
-
ns
-
19
-
ns
-
7
-
ns
-
5
-
nC
-
0.85 1.1 V
-
21
-
ns
-
13
-
nC
-
12
-
ns
-
9
-
ns
80
ID
(A)
4.5
10
3.5
60
40
20
0
0
1
2
003aag154
VGS (V) =3.0
2.8
2.6
2.4
2.2
3 _{VDS (V)} 4
20
RDS on
(m)
16
003aag155
12
8
4
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN8R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
© NXP B.V. 2011. All rights reserved.
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