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PSMN022-30PL Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 22 m logic level MOSFET
NXP Semiconductors
3
VGS (th)
(V)
2
1
max
typ
min
003a a c982
0
-6 0
0
60
120
180
Tj (°C)
PSMN022-30PL
N-channel 30 V 22 mΩ logic level MOSFET
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 Tj (°C) 180
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
100
RDSon
(mΩ)
80
60
40
20
0
0
003aad423
3
3.5
VGS (V) = 4.5
10
10
20
30
ID (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
PSMN022-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© NXP B.V. 2010. All rights reserved.
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