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PSMN022-30PL Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 22 m logic level MOSFET | |||
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PSMN022-30PL
N-channel 30 V 22 m⦠logic level MOSFET
Rev. 02 â 1 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot
total power dissipation
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 5 A;
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 5 A;
Tj = 25 °C; see Figure 13
VGS = 4.5 V; ID = 5 A;
VDS = 15 V; see Figure 14;
see Figure 15
VGS = 10 V; Tj(init) = 25 °C;
ID = 30 A; Vsup ⤠30 V;
RGS = 50 â¦; unclamped
Min Typ Max Unit
-
-
30 V
-
-
30 A
-
-
-55 -
41 W
175 °C
-
27 34 mâ¦
-
19 22 mâ¦
-
1.4 -
nC
-
4.4 -
nC
-
-
7
mJ
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