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| PMPB11EN Datasheet, PDF (9/15 Pages) NXP Semiconductors – 30 V N-channel Trench MOSFET | |||
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NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
10
VGS
(V)
8
017aaa562
6
4
2
0
0
5
10
15
QG (nC)
ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
2.5
IS
(A)
2.0
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig 15. Gate charge waveform definitions
017aaa552
1.5
1.0
Tj = 150 °C
Tj = 25 °C
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS (V)
VGS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
PMPB11EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 16 May 2012
© NXP B.V. 2012. All rights reserved.
9 of 15
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