PMPB11EN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V N-channel Trench MOSFET

PMPB11EN
30 V N-channel Trench MOSFET
Rev. 1 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Trench MOSFET technology
 Very fast switching
 Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
 Exposed drain pad for excellent
thermal conduction
 Tin-plated 100 % solderable side pads
for optical solder inspection
1.3 Applications
 Charging switch for portable devices
 DC-to-DC converters
 Power management in battery-driven
portables
 Hard disk and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 10 V; I_D = 9 A; T_j = 25 °C
Min Typ Max Unit
-
-
30 V
-20 -
20 V
[1]
-
-
13 A
-
12
14.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².