PMEG4020EPA Datasheet, PDF (9/13 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
8. Test information
PMEG4020EPA
2 A low V_F MEGA Schottky barrier rectifier
P
t₂
duty cycle δ =
t₁
t₂
t₁
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: I_F(AV) = I_M × δ with I_M defined as peak current,
I_RMS = I_F(AV) at DC, and I_RMS = I_M × δ with I_RMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.3
0.35
0.25
1
2
1.05
0.95
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
Fig 14. Package outline SOT1061
0.45
0.35
2.1
1.1
1.9
0.9
0.65
max
09-11-12
PMEG4020EPA_1
Product data sheet
Rev. 01 — 16 December 2009
© NXP B.V. 2009. All rights reserved.
9 of 13