PMEG4020EPA Datasheet, PDF (5/13 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG4020EPA
2 A low V_F MEGA Schottky barrier rectifier
10²
Z_th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
006aab816
0
0.02
0.01
1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 0.5 A
I_F = 1 A
I_F = 2 A
I_R
reverse current
V_R = 10 V
V_R = 40 V
C_d
diode capacitance f = 1 MHz
V_R = 1 V
V_R = 10 V
t_rr
reverse recovery time
Min Typ
-
360
-
400
-
470
-
5
-
20
-
270
-
100
[1] _-
85
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max
-
-
535
-
100
-
-
-
Unit
mV
mV
mV
μA
μA
pF
pF
ns
PMEG4020EPA_1
Product data sheet
Rev. 01 — 16 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 13