BUK7909-75AIE Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
100
ID
(A)
75
50
25
0
0
03ni84
175 °C
Tj = 25 °C
2
4
6 _{VGS (V)} 8
10
VGS
(V)
8
6
4
2
0
0
03ni92
14 V
VDS = 60 V
50
100 _{QG (nC)} 150
Fig 13. Transfer characteristics: drain current as a
Fig 14. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
600
ID/Isense
550
03ni98
100
IS
(A)
75
03ni85
500
450
400
4
8
12
16
20
VGS (V)
50
25
0
0.0
175 °C
Tj = 25 °C
0.4
0.8
1.2
1.6
VSD (V)
Fig 15. Drain-sense current ratio as a function of
gate-source voltage; typical values
Fig 16. Reverse diode current as a function of reverse
diode voltage; typical values
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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