BUK7909-75AIE Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7909-75AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
75
-
ns
-
270 -
nC
350
03ni80
ID
(A)
10
20
9
8.5
8
label is VGS (V)
280
7.5
210
7
6.5
140
6
70
5.5
5
4.5
0
0
2
4
6
8 _{VDS (V)10}
16
RDSon
(mΩ)
14
12
10
8
6
5
03ni82
10
15 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
15
VGS = 5.5V ^{6 V}
6.5V 7 V
03ni81
2.4
a
1.6
03nb25
10
8V
0.8
5
10 V
20 V
0
0
100
200
300 _{ID (A)} 400
0
−60
0
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7909-75AIE_2
Product data sheet
Rev. 02 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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