BUK7907-55AIE Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
03ni68
80
gfs
(S)
60
40
20
0
0
20
40
60
80 _{ID (A)} 100
Fig 11. Forward transconductance as a function of
drain current; typical values
8000
C
(pF)
6000
03ni69
Ciss
4000
2000
Crss
Coss
0
10-2
10-1
1
10 _{VDS (V)} 102
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
120
ID
(A)
100
80
60
40
20
0
0
03ni70
175 °C
Tj = 25 °C
2
4 _{VGS (V)} 6
10
VGS
(V)
8
6
4
2
0
0
03nf25
VDS = 14 V
VDS = 44 V
40
80 _{QG (nC)} 120
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK7907-55AIE_2
Product data sheet
Rev. 02 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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