BUK7907-55AIE Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
12
RDSon
(mΩ)
10
8
6
VGS (V) = 5.5
03ni67
6
6.5
7
8
10
4
2
0
0
20
40
60
80 100 120
ID (A)
2
03ne89
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
V_GS(th)
(V)
4
max
03aa32
10^−1
I_D
(A)
10^−2
03aa35
min typ max
3
typ
2
min
10^−3
10^−4
1
10^−5
0
−60
0
60
120
180
T_j (°C)
10^−6
0
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
BUK7907-55AIE_2
Product data sheet
Rev. 02 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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