BUK7507-30B Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
100
ID
(A)
75
50
25
03nm87
Tj = 175 °C
Tj = 25 °C
10
VGS
(V)
8
6
4
2
03nm85
VDD = 14 V
VDD = 24 V
0
0
2
4
6
8
VGS (V)
0
0
10
20
30 _{QG (nC)} 40
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
100
IS
(A)
75
03nm84
50
Tj = 175 °C
25
Tj = 25 °C
0
0.0
0.4
0.8 _{VSD (V)} 1.2
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 11232
Product data
Rev. 01 — 07 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9 of 15