BUK7507-30B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
300
20
10
ID
(A)
200
100
0
0
2
4
03nm89
Label VGS (V)
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
6
8
10
VDS (V)
12
RDSon
(mΩ)
10
8
6
4
5
03nk83
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
03nm90
2
RDSon
6 _6.5
Label is VGS (V)
a
(mΩ)
7 _7.5
15
1.5
8
9
10
10
1
03aa27
5
0.5
0
0
100
T_j = 25 °C
200 _{ID (A)} 300
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11232
Product data
Rev. 01 — 07 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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