PSMN8R2-80YS Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R2-80YS
N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
25
R_DSon
(mΩ)
20
003aad180
15
10
5
0
5
10
15
20
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
003aad280
2.5
a
max
2.0
003aad045
3
typ
1.5
2
min
1.0
1
0.5
0
−60
0
60
120
180
T_j (°C)
0.0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN8R2-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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