PSMN8R2-80YS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R2-80YS
N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
[1] Tested to JEDEC standards where applicable.
Min Typ Max Unit
-
0.81 1.2 V
-
55
-
ns
-
106 -
nC
80
I_D
2010 8 6
5
(A)
60
40
003aad172
4.5
20
V_GS (V) = 4
0
0
0.5
1
1.5
2
V_DS (V)
6000
C
(pF)
4000
2000
003aad178
C_iss
C_rss
0
0
3
6
9
12
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
80
I_D
(A)
60
003aad174
100
g_fs
(S)
80
003aad179
60
40
T_j = 150 °C
40
20
T_j = 175 °C
T_j = 25 °C
20
0
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN8R2-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
7 of 14