PSMN009-100B Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN009-100B
N-channel TrenchMOS SiliconMAX standard level FET
15
03ai03
3
5V
5.5 V
R_DSon
(mΩ)
V_GS = 6 V
a
12.5
2
10
8V
1
10 V 20 V
7.5
03aa29
5
0
50
100
150
200
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
6
03ai08
10⁵
C
(pF)
10⁴
03ai07
C_iss
4
2
0
0
50
100
150
200
Q_G (nC)
10³
10²
10^−1
1
C_oss
C_rss
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN009-100B_2
Product data sheet
Rev. 02 — 6 July 2009
© NXP B.V. 2009. All rights reserved.
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