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PSMN009-100B Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN009-100B
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Conditions
see Figure 4
minimum footprint; mounted on
a printed-circuit board
Min Typ Max Unit
-
-
0.65 K/W
-
50
-
K/W
1
03af48
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
P
tp
δ=
T
Fig 4.
single pulse
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN009-100B_2
Product data sheet
Rev. 02 — 6 July 2009
© NXP B.V. 2009. All rights reserved.
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