PSMN005-75B Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
0.015
V_GS (V) =
R_DSon
(Ω)
5
5.5
0.01
0.005
03ah93
T_j = 25 °C
6
6.5
7 8 10 20
0
0
100
200
300
I_D (A)
2.5
a
2
1.5
1
0.5
0
−60
0
03aj03
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS ^ID ^{= 75 A}
(V) VDD = 60 V
8 ^Tj ^{= 25 °C}
6
03ah98
10⁵
C
(pF)
10⁴
03ah97
C_iss
4
2
0
0
50
100
150
200
Q_G (nC)
10³
C_oss
C_rss
10²
10^-1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN005-75B_1
Product data sheet
Rev. 01 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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