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| PSMN005-75B Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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NXP Semiconductors
PSMN005-75B
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
VGSM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⤠175 °C; Tj ⥠25 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
pulsed; tp ⤠50 µs; δ 25 %; Tj ⤠150 °C
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 â¦
energy
IDS(AL)S
non-repetitive
VGS = 10 V; Vsup = 15 V; RGS = 50 â¦;
drain-source avalanche Tj(init) = 25 °C; unclamped
current
Min Max Unit
-
75
V
-
75
V
-20 20
V
-
75
A
-
75
A
-
400 A
-
230 W
-55 175 °C
-55 175 °C
-30 30
V
-
75
A
-
400 A
-
500 mJ
-
75
A
120
03ah89
120
03aa16
Ider
Pder
(%)
(%)
80
80
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN005-75B_1
Product data sheet
Rev. 01 â 16 November 2009
© NXP B.V. 2009. All rights reserved.
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