PMXB350UPE Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
-10
I_D
(A)
-8
aaa-009335
2.0
a
1.5
aaa-009336
-6
1.0
-4
-2
T_j = 150 °C
T_j = 25 °C
0
0
-1
-2
-3
-4
-5
V_GS (V)
V_DS > I_D × R_DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
-1.5
V_GS(th)
(V)
-1.0
-0.5
aaa-009276
max
typ
min
10³
C
(pF)
10²
10
aaa-009277
C_iss
C_oss
C_rss
0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
-10^-1
-1
f = 1 MHz; V_GS = 0 V
-10
-10²
V_DS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB350UPE
Product data sheet
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19 September 2013
© NXP N.V. 2013. All rights reserved
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