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| PMXB350UPE Datasheet, PDF (4/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET | |||
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
-10
ID
(A)
-1
Limit RDSon = VDS/ID
tp = 10 µs
aaa-009264
tp = 100 µs
tp = 1 ms
-10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 10 ms
-10-2
-10-1
-1
IDM = single pulse
-10
-102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
303 348 K/W
[2]
-
116 134 K/W
-
17
22
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
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