PMK30EP Datasheet, PDF (8/13 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET

NXP Semiconductors
PMK30EP
P-channel TrenchMOS extremely low level FET
10⁴
C
(pF)
10³
003aab623
C_iss
C_oss
C_rss
−25
I_S
(A)
−20
−15
−10
−5
003aab622
T_j = 150 °C
25 °C
10²
−10^−1
−1
−10
−10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
−0.4
−0.8
−1.2
−1.6
V_SD (V)
V_GS = 0 V
Fig 14. Source current as a function of source-drain
voltage; typical values
PMK30EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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