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PMK30EP Datasheet, PDF (1/13 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET | |||
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PMK30EP
P-channel TrenchMOS extremely low level FET
Rev. 03 â 29 April 2010
Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
1.3 Applications
 Battery management
 Load switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
25 °C ⤠Tj ⤠150 °C
voltage
ID
drain current
Tsp = 25 °C; VGS = -10 V;
see Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = -10 V; ID = -9.2 A;
Tj = 25 °C; see Figure 9
Dynamic characteristics
QGD
gate-drain charge VGS = -10 V; ID = -9.2 A;
VDS = -15 V; Tj = 25 °C;
see Figure 11; see Figure 12
Min Typ Max Unit
-
-
-30 V
-
-
-14. A
9
-
-
6.9 W
-
16 19 mâ¦
-
7-
nC
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