PHP75NQ08T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
30
Tj = 25 °C
6
R_DSon ^{VGS (V) =}
(mΩ)
20
10
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7
8
10
PHP75NQ08T
N-channel TrenchMOS standard level FET
2.4
a
1.6
003aaa918
0.8
0
0
40
80
120
160
I_D (A)
0
−60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
V_GS
(V)
4
3
2
1
V_DD = 14 V
003aaa915
V_DD = 60 V
5000
C
C_iss
(pF)
3750
2500
C_oss
1250
C_rss
003aaa917
0
0
10
20
30
40
Q_G (nC)
0
10^−2
10^−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP75NQ08T_2
Product data sheet
Rev. 02 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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