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| PHP75NQ08T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
PHP75NQ08T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A; Vsup ⤠75 V;
drain-source avalanche unclamped; tp = 0.07 ms; RGS = 50 â¦
energy
Min Max Unit
-
75
V
-
75
V
-20 20
V
-
53
A
-
75
A
-
240 A
-
157 W
-55 175 °C
-55 175 °C
-
75
A
-
240 A
-
120 mJ
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PHP75NQ08T_2
Product data sheet
Rev. 02 â 2 March 2009
© NXP B.V. 2009. All rights reserved.
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