PHP101NQ04T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP101NQ04T
N-channel TrenchMOS standard level FET
15
RDSon
(mΩ)
Tj = 25 °C
VGS = 7 V
10
03aq94
8V
9V
10 V
5
0
0
80
160 _{ID (A)} 240
2
a
03aa27
1.5
1
0.5
0
-60
0
60
120 _{Tj (°C)} 180
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
6
14 V
03aq98
VDD = 32 V
4
2
0
0
10
20
30 _{QG (nC)} 40
10⁴
C
(pF)
10³
10²
10^-1
1
03aq97
Ciss
Coss
Crss
10
10²
VDS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP101NQ04T_2
Product data sheet
Rev. 02 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
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