PHP101NQ04T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP101NQ04T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1;
see Figure 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Avalanche ruggedness
t_p ≤ 10 µs; pulsed; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C; I_D = 45 A; V_sup ≤ 55 V;
drain-source avalanche unclamped; t_p = 0.17 ms; R_GS = 50 Ω
energy
Source-drain diode
I_S
source current
T_mb = 25 °C
I_SM
peak source current t_p ≤ 10 µs; pulsed; T_mb = 25 °C
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
71
A
-
75
A
-
240 A
-
157 W
-55 175 °C
-55 175 °C
-
200 mJ
-
75
A
-
240 A
PHP101NQ04T_2
Product data sheet
Rev. 02 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
3 of 13