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PBSS4041PT Datasheet, PDF (8/15 Pages) NXP Semiconductors – 60 V, 2.7 A PNP low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low VCEsat (BISS) transistor
â1
VCEsat
(V)
â10â1
006aac032
(1)
(2)
(3)
â10â2
â10â1
â1
â10
â102
â103
â104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac034
â1
VCEsat
(V)
â10â1
(1)
(2)
â10â2
(3)
006aac033
â10â3
â10â1
â1
â10
â102
â103
â104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac035
10
10
1
10â1
(1)
(2)
(3)
10â2
â10â1
â1
â10
â102
â103
â104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
1
10â1
(1)
(2)
(3)
10â2
â10â1
â1
â10
â102
â103
â104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4041PT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 9 March 2010
© NXP B.V. 2010. All rights reserved.
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