PBSS4041PT Datasheet, PDF (4/15 Pages) NXP Semiconductors – 60 V, 2.7 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4041PT
60 V, 2.7 A PNP low V_CEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
320 K/W
[2] _-
-
190 K/W
[3] _-
-
115 K/W
-
-
62
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
10³
Z_th(j-a)
(K/W)
10²
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab955
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4041PT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 March 2010
© NXP B.V. 2010. All rights reserved.
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